Basic principles and research progress of laser simulation of ionization radiation effect in semiconductor devices


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    According to the requirements of safe, simple and nondestructive radiation effect investigation of semiconductor devices, the method of laser simulation was proposed and greatly promoted. Compared with large-scale facilities, laser simulation has various unique advantages. It helps understand the ionization radiation effect in depth and is an effective low-cost, table-top supplement for the hardness assurance. Its research shows great significance for radiation effect study in both theory and practice. In this paper, the basic principles of the interactions of γ and laser with semiconductor devices are firstly presented. Then the physical basics and characteristics of laser simulation are given, with the research progress review followed. The existing problems of current research are deeply discussed providing with feasible research approaches. In the end, necessary research contents in the future are proposed.

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李 沫,孙 鹏,宋 宇,代 刚,张 健.半导体器件辐射电离效应的激光模拟方法[J]. Journal of Terahertz Science and Electronic Information Technology ,2015,13(1):160~168

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  • Received:December 15,2014
  • Revised:January 12,2015
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  • Online: March 17,2015
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